GaN thin films on z‐ and x ‐cut LiNbO 3 substrates by MOVPE

Abstract We report epitaxial growth of GaN layers on z ‐ and x ‐cut LiNbO 3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X‐ray diffraction. For both, z‐ and x‐ cut orientations of LiNbO 3 substrates, the GaN layers have c ‐axis orientation normal to the su...

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Published inPhysica status solidi. C Vol. 5; no. 6; pp. 1565 - 1567
Main Authors Ougazzaden, A., Moudakir, T., Aggerstam, T., Orsal, G., Salvestrini, J. P., Gautier, S., Sirenko, A. A.
Format Journal Article
LanguageEnglish
Published 01.05.2008
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Summary:Abstract We report epitaxial growth of GaN layers on z ‐ and x ‐cut LiNbO 3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X‐ray diffraction. For both, z‐ and x‐ cut orientations of LiNbO 3 substrates, the GaN layers have c ‐axis orientation normal to the substrate plane and the in‐plane lattice orientation of GaN layers coincides with the primary axes of LiNbO 3 substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a free‐standing GaN is of the order of +0.37% and +0.2% for z ‐ and x ‐cut substrates, respectively. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.200778490