Photoelectrochemical properties and crystalline structure change of Sb-doped TiO 2 thin films prepared by the sol-gel method

• Published in: Journal of materials research Vol. 19; no. 11; pp. 3189 - 3195
• Main Authors: Bei, Zongmin, Ren, Dasen, Cui, Xiaoli, Shen, Jie, Yang, Xiliang, Zhang, Zhuangjian
• Format: Journal Article
• Language: English
• Published: 01.11.2004
• ISSN: 0884-2914; 2044-5326
• DOI: 10.1557/JMR.2004.0412

Ti 1−X Sb X O 2 samples were obtained from dip-coating sol-gel method and a subsequent anneal at 450 °C. They had an average crystallite size of 13.3–20 nm. Cyclic voltammograms taken under ultraviolet (UV) and Xe lamp illumination in a 0.5 M Na 2 SO 4 electrolyte showed that the Sb-doped samples had greater photocurrent densities than pure titania electrode, with an optimal Sb concentration of 0.2%. Oxidative peaks were observed in the cyclic voltammograms obtained in the dark after certain exposure duration to UV light. X-ray diffraction patterns and Raman spectra show a phase transformation from brookite to anatase in the samples with Sb concentration up to 0.2%. Ti 4+ ions were substituted by Sb to form the anatase structure of Sb–O–Ti, improving the crystallization efficiency. The Sb–Sb bonds were formed due to the introduction of excessive Sb atoms.