Photoelectrochemical properties and crystalline structure change of Sb-doped TiO 2 thin films prepared by the sol-gel method
Ti 1−X Sb X O 2 samples were obtained from dip-coating sol-gel method and a subsequent anneal at 450 °C. They had an average crystallite size of 13.3–20 nm. Cyclic voltammograms taken under ultraviolet (UV) and Xe lamp illumination in a 0.5 M Na 2 SO 4 electrolyte showed that the Sb-doped samples ha...
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Published in | Journal of materials research Vol. 19; no. 11; pp. 3189 - 3195 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
01.11.2004
|
Online Access | Get full text |
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Summary: | Ti
1−X
Sb
X
O
2
samples were obtained from dip-coating sol-gel method and a subsequent anneal at 450 °C. They had an average crystallite size of 13.3–20 nm. Cyclic voltammograms taken under ultraviolet (UV) and Xe lamp illumination in a 0.5 M Na
2
SO
4
electrolyte showed that the Sb-doped samples had greater photocurrent densities than pure titania electrode, with an optimal Sb concentration of 0.2%. Oxidative peaks were observed in the cyclic voltammograms obtained in the dark after certain exposure duration to UV light. X-ray diffraction patterns and Raman spectra show a phase transformation from brookite to anatase in the samples with Sb concentration up to 0.2%. Ti
4+
ions were substituted by Sb to form the anatase structure of Sb–O–Ti, improving the crystallization efficiency. The Sb–Sb bonds were formed due to the introduction of excessive Sb atoms. |
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ISSN: | 0884-2914 2044-5326 |
DOI: | 10.1557/JMR.2004.0412 |