Nitrided HfTiON/Ga 2 O 3 (Gd 2 O 3 ) as stacked gate dielectric for GaAs MOS applications

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Bibliographic Details
Published inApplied physics express Vol. 7; no. 6; p. 61201
Main Authors Wang, Li-Sheng, Xu, Jing-Ping, Liu, Lu, Tang, Wing-Man, Lai, Pui-To
Format Journal Article
LanguageEnglish
Published 01.06.2014
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ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.061201