Interface and Defect Structures of (001)-Oriented SrBi 2 Ta 2 O 9 Thin Film Epitaxially Grown on (001) SrTiO 3 Single Crystal

Interface and defect structures of epitaxial c -axis oriented SrBi 2 Ta 2 O 9 thin films on well lattice-matched (001) SrTiO 3 substrates were crystallographically characterized by transmission electron microscopy. The film was coherently grown on the SrTiO 3 substrate without interfacial layers and...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 38; no. 11A; p. L1261
Main Authors Suzuki, Toshimasa, Nishi, Yuji, Fujimoto, Masayuki, Ishikawa, Katsuyuki, Funakubo, Hiroshi
Format Journal Article
LanguageEnglish
Published 01.11.1999
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Summary:Interface and defect structures of epitaxial c -axis oriented SrBi 2 Ta 2 O 9 thin films on well lattice-matched (001) SrTiO 3 substrates were crystallographically characterized by transmission electron microscopy. The film was coherently grown on the SrTiO 3 substrate without interfacial layers and misfit dislocations, preserving the crystallographic relation of (001)[110] SrBi 2 Ta 2 O 9 //(001)[100] SrTiO 3 . The plausible atomic stacking sequence at the interface was found to be (SrTiO 3 bulk)–SrO–TiO 2 –SrO–TaO 2 –Bi 2 O 2 –TaO 2 –SrO–(film bulk), where an electrically neutral SrO layer could be preferentially formed on the TiO 2 -terminated SrTiO 3 substrate. High-resolution lattice images of the film showed that distinctive wedge-shaped contrasts could be attributed to the formation of c /6 translational boundaries originating from single unit cell steps on the SrTiO 3 substrate.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.L1261