Ti 0.5 Al 0.5 O-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors by Using Non-Vacuum Ultrasonic Spray Pyrolysis Deposition

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Bibliographic Details
Published inECS journal of solid state science and technology Vol. 5; no. 12; pp. Q284 - Q288
Main Authors Lee, Ching-Sung, Hsu, Wei-Chou, Liu, Han-Yi, Chiang, Bo-Jung
Format Journal Article
LanguageEnglish
Published 2016
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ISSN:2162-8769
2162-8777
DOI:10.1149/2.0211612jss