Magnetic Penetration Depths and Normal-State Resistivities of Epitaxial and Polycrystalline NbC x N 1-x Films

We have studied the magnetic penetration depth λ and the normal-state resistivity ρ of epitaxial and polycrystalline NbC x N 1- x films as a function of film thickness t and sputtering gas pressure P during the deposition of the films. It was found that λ(∼200 nm) and ρ(∼50 µΩ·cm) of epitaxial films...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 31; no. 3A; p. L239
Main Authors Kohjiro, Satoshi, Akira Shoji, Akira Shoji, Shogo Kiryu, Shogo Kiryu
Format Journal Article
LanguageEnglish
Published 01.03.1992
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Summary:We have studied the magnetic penetration depth λ and the normal-state resistivity ρ of epitaxial and polycrystalline NbC x N 1- x films as a function of film thickness t and sputtering gas pressure P during the deposition of the films. It was found that λ(∼200 nm) and ρ(∼50 µΩ·cm) of epitaxial films are almost independent of P and t , while λ(>300 nm) and ρ(>110 µΩ·cm) of polycrystalline films increase considerably with increasing P (>2 Pa) or decreasing t (<80 nm). The pressure and thickness dependence of λ and ρ of polycrystalline films can be explained by a model of Josephson coupling between grains.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.31.L239