Lattice Parameter Control of Epitaxially Grown Hexagonal LaF 3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF 3

Control of lattice parameters of hexagonal LaF 3 thin films has been attempted by incorporation of orthorhombic YF 3 , in order to realize lattice-matched epitaxial growth of the films on GaAs(111)B substrates. It has been found that the lattice parameter of the Y x La 1- x F 3 film is equivalently...

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Published inJapanese Journal of Applied Physics Vol. 31; no. 4B; p. L508
Main Authors Aizawa, Kouji, Herve Ricard, Herve Ricard, Hiroshi Ishiwara, Hiroshi Ishiwara
Format Journal Article
LanguageEnglish
Published 01.04.1992
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Summary:Control of lattice parameters of hexagonal LaF 3 thin films has been attempted by incorporation of orthorhombic YF 3 , in order to realize lattice-matched epitaxial growth of the films on GaAs(111)B substrates. It has been found that the lattice parameter of the Y x La 1- x F 3 film is equivalently matched to that of GaAs(111) around the mixing ratio x of 0.55. It has also been found from Rutherford backscattering spectroscopy that the channeling minimum yield of the epitaxial films on GaAs(111)B substrates is relatively low (the best value is 0.36), when the mixing ratio of YF 3 is close to that of the lattice matching condition.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.31.L508