Reduction of Threading Dislocation Density and Suppression of Crack Formation in In x Ga 1-x P(x∼0.5) Grown on Si(100) Using Strained Short-Period Superlattices

We have investigated the reduction of threading dislocations and the suppression of crack formation in In x Ga 1- x P ( x ∼ 0.5) grown on Si using the multi-strained short-period superlattices (SSPSs) by transmission electron microscopy (TEM). The epitaxial layers were grown two-dimensionally and th...

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Published inJapanese Journal of Applied Physics Vol. 36; no. 2B; p. L187
Main Authors Yasufumi Takagi, Yasufumi Takagi, Hiroo Yonezu, Hiroo Yonezu, Shinobu Uesugi, Shinobu Uesugi, Naoki Ohshima, Naoki Ohshima
Format Journal Article
LanguageEnglish
Published 01.02.1997
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Summary:We have investigated the reduction of threading dislocations and the suppression of crack formation in In x Ga 1- x P ( x ∼ 0.5) grown on Si using the multi-strained short-period superlattices (SSPSs) by transmission electron microscopy (TEM). The epitaxial layers were grown two-dimensionally and the density of threading dislocations was reduced by the generation of misfit dislocations at all hetero-interfaces. The residual strain was reduced by compensation of the lattice-mismatched stress and the thermal stress, and the formation of cracks was suppressed by controlling the In composition.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.36.L187