Electrical Properties of Holmium-Doped BaTiO 3
The effects of Ho (holmium) doping on the electrical properties and microstructural development of (Ba 1- x Ho x )TiO 3 were investigated by means of defect chemistry on the basis of equilibrium electrical conductivity data measured at 1300°C, as a function of oxygen activity. Ho 2 O 3 additions to...
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| Published in | Japanese Journal of Applied Physics Vol. 44; no. 6R; p. 4047 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2005
|
| Online Access | Get full text |
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| Summary: | The effects of Ho (holmium) doping on the electrical properties and microstructural development of (Ba
1-
x
Ho
x
)TiO
3
were investigated by means of defect chemistry on the basis of equilibrium electrical conductivity data measured at 1300°C, as a function of oxygen activity. Ho
2
O
3
additions to BaTiO
3
up to 0.3 mol% were compensated by electrons under all oxygen partial pressures and the samples exhibited a low insulating resistance at room temperature. However, at Ho>0.3 mol%, the compensation mode switched from electrons to cation vacancies in the region of high oxygen partial pressure. The solubility limit of Ho
Ba
•
was confirmed to be less than 3.0 mol%. The specimens doped with Ho<0.5 mol% had a low insulating resistance and large grains, whereas high insulating resistance and fine grains were observed in the samples doped with Ho grater than 0.5 mol%. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.44.4047 |