LPE Ga 1-x In x Sb Multigrading Layers with Cut-off Wavelength up to 4.71 µm (x=0.75)

The dependence of the energy band-gap on In atomic fraction for the liquid phase epitaxy (LPE) GaInSb/GaSb multigrading layers has been investigated by infrared transmission measurements combined with electroprobe microanalysis (EPMA). The result showed that epilayers with cut-off wavelength up to 4...

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Published inJapanese Journal of Applied Physics Vol. 31; no. 4R; p. 1016
Main Authors Xiuying, Gong, Okitsu, Kazuhiko, Hayakawa, Yasuhiro, Tomuo Yamaguchi, Tomuo Yamaguchi, Masashi Kumagawa, Masashi Kumagawa
Format Journal Article
LanguageEnglish
Published 01.04.1992
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Summary:The dependence of the energy band-gap on In atomic fraction for the liquid phase epitaxy (LPE) GaInSb/GaSb multigrading layers has been investigated by infrared transmission measurements combined with electroprobe microanalysis (EPMA). The result showed that epilayers with cut-off wavelength up to 4.71 µm at room temperature and with In atomic fraction as high as 0.75 have been obtained for the first time.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.31.1016