Surface Structure of InAs (001) Treated with (NH 4 ) 2 S x Solution

The surface structure of (NH 4 ) 2 S x -treated InAs (001) was studied by means of coaxial impact collision ion scattering spectroscopy (CAICISS) and low-energy electron diffraction (LEED). These observations revealed that arsenic atoms at the outermost surface are partially replaced by sulfur atoms...

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Published inJapanese Journal of Applied Physics Vol. 30; no. 5A; p. L786
Main Authors Katayama, Mitsuhiro, Aono, Masakazu, Oigawa, Haruhiro, Nannichi, Yasuo, Sugahara, Hirohiko, Oshima, Masaharu
Format Journal Article
LanguageEnglish
Published 01.05.1991
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Summary:The surface structure of (NH 4 ) 2 S x -treated InAs (001) was studied by means of coaxial impact collision ion scattering spectroscopy (CAICISS) and low-energy electron diffraction (LEED). These observations revealed that arsenic atoms at the outermost surface are partially replaced by sulfur atoms. Significantly, the (2×1) reconstruction of the (NH 4 ) 2 S x -treated surface with heat treatment at 380°C is described by the formation of dimers lined up in [11̄0] direction. This surface model is supported by the data obtained by synchrotron radiation photoemission spectroscopy (SRPES).
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.30.L786