Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors with HfO 2 /SiO 2 /Si and HfO 2 /SiO x N y /Si Stack Structures Formed by Remote Plasma Technique

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 47; no. 8R; p. 6196
Main Authors Woo, Sanghyun, Hong, Hyungseok, Kim, Seokhoon, Kim, Hyungchul, Kim, Jinwoo, Jeon, Hyeongtag, Bae, Choelhwyi, Okada, Takayuki, Sawada, Kazuaki, Ishida, Makoto
Format Journal Article
LanguageEnglish
Published 01.08.2008
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.6196