Fabrication and Characterization of Metal/Ferroelectric/Semiconductor Field Effect Transistor with the Ag/Bi 4 Ti 3 O 12 /p-Si(100) Structure

Metal–ferroelectric–semiconductor field-effect-transistors (MFS-FETs) with the Ag/Bi 4 Ti 3 O 12 /p-Si (100) structures were fabricated. The I ds – V g hysteresis curve of the FET shows the counter-clockwise direction, which demonstrates the charge of channel conductivity due to the ferroelectric po...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 43; no. 5R; p. 2435
Main Authors Yu, Jun, Wang, Hua, Zhao, Bairu, Wang, Yunbo, Guo, Dongyun, Gao, Junxiong, Zhou, Wenli, Xie, Jifan
Format Journal Article
LanguageEnglish
Published 01.05.2004
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Summary:Metal–ferroelectric–semiconductor field-effect-transistors (MFS-FETs) with the Ag/Bi 4 Ti 3 O 12 /p-Si (100) structures were fabricated. The I ds – V g hysteresis curve of the FET shows the counter-clockwise direction, which demonstrates the charge of channel conductivity due to the ferroelectric polarization of Bi 4 Ti 3 O 12 and the memory window with a gate voltage of ±6 V was 1.2 V. The current ratio of I ds(on) to I ds(off) was over two orders in magnitude at zero gate voltage which indicates the MFS-FET can be used in nondestructive readout (NDRO) applications.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.43.2435