Preparation and Properties of Ru and RuO 2 Thin Film Electrodes for Ferroelectric Thin Films
Ru and RuO 2 thin films were prepared by RF magnetron sputtering. The crystalline structure and electrical properties of these films were investigated. Reactive sputtering of a ruthenium metal target was carried out in a mixed gas of argon and oxygen at 580° C. Total pressure ( P O 2 + P Ar ) was co...
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| Published in | Japanese Journal of Applied Physics Vol. 33; no. 9S; p. 5223 |
|---|---|
| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
01.09.1994
|
| Online Access | Get full text |
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| Summary: | Ru and RuO
2
thin films were prepared by RF magnetron sputtering. The crystalline structure and electrical properties of these films were investigated. Reactive sputtering of a ruthenium metal target was carried out in a mixed gas of argon and oxygen at 580° C. Total pressure (
P
O
2
+
P
Ar
) was controlled to maintain a constant pressure of 1 Pa. The RuO
2
single phase could be obtained when
P
O
2
was 0.5 Pa and the deposition rate was about 30 nm/min. The resistivity of the 290 nm-thick RuO
2
thin films deposited on SiO
2
(1000 nm)/Si was 54.9 µ Ω· cm. However, the resistivity increased with decreasing film thickness. Fatigue resistance of (Pb, La)TiO
3
thin films with RuO
2
as top and bottom electrodes was improved compared to the films on Pt electrodes. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.33.5223 |