Analytical Model for Epitaxial Growth of SiGe from SiH 4 and GeH 4 in Reduced-Pressure Chemical Vapor Deposition

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 47; no. 12R; p. 8733
Main Authors Imai, Masato, Miyamura, Yoshiji, Murata, Daisuke, Kanda, Takahiro
Format Journal Article
LanguageEnglish
Published 01.12.2008
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.8733