Moisture-Resistive Properties of SiN x Films Prepared by Catalytic Chemical Vapor Deposition below 100°C for Flexible Organic Light-Emitting Diode Displays

Silicon nitride (SiN x ) films were deposited on Si and polycarbonate (PC) substrates at temperatures below 100°C by a catalytic chemical vapor deposition (Cat-CVD) method. By adding H 2 to source gases, SiH 4 and NH 3 , it was possible to prevent the deterioration of film qualities in low-temperatu...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 44; no. 4R; p. 1923
Main Authors Heya, Akira, Niki, Toshikazu, Takano, Masahiro, Yonezawa, Yasuto, Minamikawa, Toshiharu, Muroi, Susumu, Minami, Shigehira, Ikari, Tokuo, Izumi, Akira, Masuda, Atsushi, Umemoto, Hironobu, Matsumura, Hideki
Format Journal Article
LanguageEnglish
Published 01.04.2005
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Summary:Silicon nitride (SiN x ) films were deposited on Si and polycarbonate (PC) substrates at temperatures below 100°C by a catalytic chemical vapor deposition (Cat-CVD) method. By adding H 2 to source gases, SiH 4 and NH 3 , it was possible to prevent the deterioration of film qualities in low-temperature deposition processes. H atoms produced from H 2 are effective for increasing the film densities and improving passivation properties. The water vapor transmission rate of SiN x films on PC substrates deposited at 80°C was lower than 0.3 g/m 2 day; the detection limit for a cup method. It is concluded that the Cat-CVD method with H 2 dilution is a promising technique for preparing highly moisture-resistive SiN x films at low temperatures.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.1923