Effects of Rare-Earth Oxides on Temperature Stability of Acceptor-Doped BaTiO 3
The effects of rare-earth oxides (Yb 2 O 3 , Ho 2 O 3 , Er 2 O 3 ) on the temperature stability of acceptor doped BaTiO 3 dielectrics were studied. The samples doped with 1 mol % rare-earth oxides exhibited the highest dielectric constants. Substantial reductions in grain size were observed in the s...
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| Published in | Japanese Journal of Applied Physics Vol. 44; no. 8R; p. 6143 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
01.08.2005
|
| Online Access | Get full text |
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| Summary: | The effects of rare-earth oxides (Yb
2
O
3
, Ho
2
O
3
, Er
2
O
3
) on the temperature stability of acceptor doped BaTiO
3
dielectrics were studied. The samples doped with 1 mol % rare-earth oxides exhibited the highest dielectric constants. Substantial reductions in grain size were observed in the specimens with 1 mol % rare-earth oxides (∼0.6 µm) compared with the nondoped specimens (∼1.5 µm). As the rare-earth oxide content was increased, the Curie point progressively moved to higher temperatures. The addition of rare-earth oxides improved the temperature dependence of the dielectric constants of the acceptor-doped BaTiO
3
–rare-earth oxide systems over the whole temperature range studied (-55 to 150°C), and the temperature coefficient of capacitance(TCC) curves satisfied the X8R requirements for >2 mol % Yb
2
O
3
and >3 mol % Er
2
O
3
or Ho
2
O
3
. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.44.6143 |