1.1-µm-Range Low-Resistance InGaAs Quantum-Well Vertical-Cavity Surface-Emitting Lasers with a Buried Type-II Tunnel Junction

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 46; no. 6L; p. L512
Main Authors Yashiki, Kenichiro, Suzuki, Naofumi, Fukatsu, Kimiyoshi, Anan, Takayoshi, Hatakeyama, Hiroshi, Tsuji, Masayoshi
Format Journal Article
LanguageEnglish
Published 01.06.2007
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.46.L512