H 2 O/O 2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells

Aluminum acetylacetonate-based AlO x thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O 2 , or water vapor (H 2 O/O 2 ) for 15 or 120 min. XP...

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Published inInternational journal of photoenergy Vol. 2019; pp. 1 - 7
Main Authors Uzum, Abdullah, Kanda, Hiroyuki, Noguchi, Takuma, Nakazawa, Yuya, Taniwaki, Shota, Hotta, Yasushi, Haruyama, Yuichi, Shibayama, Naoyuki, Ito, Seigo
Format Journal Article
LanguageEnglish
Published 17.03.2019
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Summary:Aluminum acetylacetonate-based AlO x thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O 2 , or water vapor (H 2 O/O 2 ) for 15 or 120 min. XPS analysis confirms the AlO x formation and reveals a high intensity of interfacial SiO x at the AlO x /Si interface of processed wafers. Ambient H 2 O/O 2 was found to be more beneficial for the activation of introduced AlO x passivation films which offers high lifetime improvements with a low thermal budget. Carrier lifetime measurements provides that symmetrically coated wafers reach 119.3  μ s and 248.3  μ s after annealing in ambient H 2 O/O 2 for 15 min and 120 min, respectively.
ISSN:1110-662X
1687-529X
DOI:10.1155/2019/4604932