Electrical Properties of (1-x)Ta 2 O 5 –xTiO 2 Crystalline Thin Films Prepared by Metalorganic Decomposition

• Published in: Japanese Journal of Applied Physics Vol. 40; no. 3R; p. 1431
• Main Authors: Salam, K. M. A., Konishi, Hidekazu, Mizuno, Masahiro, Fukuda, Hisashi, Nomura, Shigeru
• Format: Journal Article
• Language: English
• Published: 01.03.2001
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.40.1431

Polycrystalline (1- x )Ta 2 O 5 – x TiO 2 thin films were formed on a Si substrate by metalorganic decomposition (MOD) at an annealing temperature of 900°C. Thin films with 0.92Ta 2 O 5 –0.08TiO 2 ( x =0.08) composition exhibited superior insulating properties compared to other compositions. The main reason for the improvement in the insulating properties could be the charge compensation of excess oxygen by the TiO 2 additive. The leakage current density was lower than 1×10 -9 A/cm 2 up to an applied electric field of 3 MV/cm. The bulk-limited Poole-Frenkel conduction dominates the current–voltage characteristics. capacitance–voltage characteristics of these films showed good dielectric properties with a maximum dielectric constant of 16 and a charge-storage density of 42.5 fC/µm 2 at 3 MV/cm.