Nitrogen Profile in SiO x N y Prepared by Thermal Nitridation of Ozone Oxide

Ultrathin silicon oxynitride films are prepared by ozone and thermal oxidation of Si(001) followed by rapid thermal nitridation. The nitrogen depth profiles in these films are measured by high-resolution Rutherford backscattering spectroscopy. The observed nitrogen profiles are essentially similar,...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 40; no. 6R; p. 4011
Main Authors Kaoru Nakajima, Kaoru Nakajima, Kenji Kimura, Kenji Kimura, Akira Kurokawa, Akira Kurokawa, Shingo Ichimura, Shingo Ichimura, Hisashi Fukuda, Hisashi Fukuda
Format Journal Article
LanguageEnglish
Published 01.06.2001
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Summary:Ultrathin silicon oxynitride films are prepared by ozone and thermal oxidation of Si(001) followed by rapid thermal nitridation. The nitrogen depth profiles in these films are measured by high-resolution Rutherford backscattering spectroscopy. The observed nitrogen profiles are essentially similar, having a peak at the SiO 2 /Si interface, although the interface strain in the ozone oxide is known to be much smaller than that of the thermal oxide. This indicates that the interface strain relaxation due to the nitrogen incorporation is not responsible for the nitrogen accumulation at the interface.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.4011