Preparation and Characterization of SrBi 2 (Ta 1-x Nb x ) 2 O 9 Thin Films by Metalorganic Chemical Vapor Deposition from Two Organometallic Source Bottles

SrBi 2 (Ta 1- x Nb x ) 2 O 9 (SBTN) thin films were first prepared on Pt/Ti/SiO 2 /Si substrates by metalorganic chemical vapor deposition (MOCVD) with high compositional reproducibility. Bi(CH 3 ) 3 , a mixture of Sr[Ta(O·C 2 H 5 ) 6 ] 2 and Sr[Nb(O·C 2 H 5 ) 6 ] 2 , and O 2 gas were used as source...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 39; no. 6B; p. L620
Main Authors Mitsuya, Masatoshi, Ishikawa, Katsuyuki, Nukaga, Norimasa, Funakubo, Hiroshi
Format Journal Article
LanguageEnglish
Published 01.06.2000
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Summary:SrBi 2 (Ta 1- x Nb x ) 2 O 9 (SBTN) thin films were first prepared on Pt/Ti/SiO 2 /Si substrates by metalorganic chemical vapor deposition (MOCVD) with high compositional reproducibility. Bi(CH 3 ) 3 , a mixture of Sr[Ta(O·C 2 H 5 ) 6 ] 2 and Sr[Nb(O·C 2 H 5 ) 6 ] 2 , and O 2 gas were used as sources. The Nb/(Ta+Nb) ratio in the film was almost the same as that of the source materials. The film, deposited at 500°C following heat treatment at 800°C for 30 min in O 2 atmosphere, consisted of an almost single phase of SBTN. The remanent polarization and the coercive field of the 330 nm-thick film were 8.5 µC/cm 2 and 91 kV/cm, respectively. This film showed negligible fatigue after 5×10 10 polarization switching cycles.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.39.L620