Preparation and Characterization of SrBi 2 (Ta 1-x Nb x ) 2 O 9 Thin Films by Metalorganic Chemical Vapor Deposition from Two Organometallic Source Bottles
SrBi 2 (Ta 1- x Nb x ) 2 O 9 (SBTN) thin films were first prepared on Pt/Ti/SiO 2 /Si substrates by metalorganic chemical vapor deposition (MOCVD) with high compositional reproducibility. Bi(CH 3 ) 3 , a mixture of Sr[Ta(O·C 2 H 5 ) 6 ] 2 and Sr[Nb(O·C 2 H 5 ) 6 ] 2 , and O 2 gas were used as source...
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Published in | Japanese Journal of Applied Physics Vol. 39; no. 6B; p. L620 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.06.2000
|
Online Access | Get full text |
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Summary: | SrBi
2
(Ta
1-
x
Nb
x
)
2
O
9
(SBTN) thin films were first
prepared on Pt/Ti/SiO
2
/Si substrates by metalorganic chemical vapor deposition
(MOCVD) with high compositional reproducibility. Bi(CH
3
)
3
, a mixture of
Sr[Ta(O·C
2
H
5
)
6
]
2
and
Sr[Nb(O·C
2
H
5
)
6
]
2
, and O
2
gas were used as sources. The
Nb/(Ta+Nb) ratio in the film was almost the same as that of the source
materials. The film, deposited at 500°C following heat treatment at 800°C
for 30 min in O
2
atmosphere, consisted of an almost single phase of SBTN. The
remanent polarization and the coercive field of the 330 nm-thick film were
8.5 µC/cm
2
and 91 kV/cm, respectively. This film showed negligible fatigue
after 5×10
10
polarization switching cycles. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.L620 |