Growth of β-FeSi 2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition

We succeeded for the first time in preparing a high-quality (101)-oriented epitaxial β-FeSi 2 film on Si(111) wafer by metal-organic chemical vapor deposition (MOCVD) using Fe(CO) 5 and SiH 4 as source materials. The full width at half maximum (FWHM) of the rocking curve of the β-FeSi 2 (202) peak w...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 40; no. 5A; p. L460
Main Authors Akiyama, Kensuke, Ohya, Seishiro, Takano, Hiromichi, Kieda, Nobuo, Funakubo, Hiroshi
Format Journal Article
LanguageEnglish
Published 01.05.2001
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Summary:We succeeded for the first time in preparing a high-quality (101)-oriented epitaxial β-FeSi 2 film on Si(111) wafer by metal-organic chemical vapor deposition (MOCVD) using Fe(CO) 5 and SiH 4 as source materials. The full width at half maximum (FWHM) of the rocking curve of the β-FeSi 2 (202) peak was 0.46 degree for the film deposited at 750°C at a rate of 4 nm/min. Moreover, a smooth-surface film of up to 650 nm thickness could be deposited by this method. Carbon content in the film was less than 0.1 at%.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.40.L460