Thermal Analysis of Chemical Reaction Forming the CuGaSe 2 Single Phase

• Published in: Japanese Journal of Applied Physics Vol. 35; no. 7R; p. 3830
• Main Authors: Hiroaki Matsushita, Hiroaki Matsushita, Hiroyuki Jitsukawa, Hiroyuki Jitsukawa, Takeo Takizawa, Takeo Takizawa
• Format: Journal Article
• Language: English
• Published: 01.07.1996
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.35.3830

The chemical reaction which forms the CuGaSe 2 phase has been investigated by differential thermal analysis and powder X-ray diffraction. The two mixtures of CuGa+2Se and Cu+Ga+2Se are used as starting materials. In the former mixture, the CuGaSe 2 phase has been formed incompletely below the melting point of CuGaSe 2 . In the latter mixture, the CuGaSe 2 phase has been formed by the exothermic reaction between CuSe 2 and Ga phases at about 900°C, after the formation of the CuSe 2 phase below 380°C. In contrast to the case of CuInSe 2 , the selenization of CuGa alloy is not necessarily required for growing the CuGaSe 2 single phase. The chemical reaction between Cu selenides and Ga at temperatures higher than 900°C works to remove heterogeneous products and form a CuGaSe 2 single phase.