DC and RF Performance of 50 nm Gate Pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
In this paper, we report on the material and device characteristics of pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy. The electron Hall mobility in the (411)A HEMT was 2.5 times higher a...
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Published in | Japanese Journal of Applied Physics Vol. 39; no. 7B; p. L720 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.07.2000
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Online Access | Get full text |
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Abstract | In this paper, we report on the material and device characteristics of pseudomorphic In
0.7
Ga
0.3
As/In
0.52
Al
0.48
As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy. The electron Hall mobility in the (411)A HEMT was 2.5 times higher at 15 K and 1.3 times higher even at room temperature than that in a HEMT grown on a conventional (100) InP substrate. The (411)A HEMTs with 50 nm gates provided excellent DC and RF device characteristics.The maximum transconductance was as high as 1.1 S/mm, and the cutoff frequency reached 355 GHz. |
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AbstractList | In this paper, we report on the material and device characteristics of pseudomorphic In
0.7
Ga
0.3
As/In
0.52
Al
0.48
As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy. The electron Hall mobility in the (411)A HEMT was 2.5 times higher at 15 K and 1.3 times higher even at room temperature than that in a HEMT grown on a conventional (100) InP substrate. The (411)A HEMTs with 50 nm gates provided excellent DC and RF device characteristics.The maximum transconductance was as high as 1.1 S/mm, and the cutoff frequency reached 355 GHz. |
Author | Masataka Higashiwaki, Masataka Higashiwaki Kohki Hikosaka, Kohki Hikosaka Takashi Mimura, Takashi Mimura Akira Endoh, Akira Endoh Satoshi Shimomura, Satoshi Shimomura Yoshimi Yamashita, Yoshimi Yamashita Takahiro Kitada, Takahiro Kitada Toshiaki Matsui, Toshiaki Matsui Satoshi Hiyamizu, Satoshi Hiyamizu Toyohiro Aoki, Toyohiro Aoki |
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CitedBy_id | crossref_primary_10_1116_1_1387454 crossref_primary_10_1116_1_2382944 crossref_primary_10_1016_j_jcrysgro_2016_12_006 crossref_primary_10_1016_S0022_0248_01_00707_2 crossref_primary_10_1016_S1386_9477_02_00212_6 |
Cites_doi | 10.1109/55.145018 10.1063/1.363911 10.1109/75.392284 10.1116/1.591435 10.1143/JJAP.38.L154 10.1063/1.117823 10.1109/T-ED.1972.17468 10.1007/s11664-998-0161-9 10.1063/1.323670 10.1109/16.155871 |
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Snippet | In this paper, we report on the material and device characteristics of pseudomorphic In
0.7
Ga
0.3
As/In
0.52
Al
0.48
As high electron mobility transistors... |
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Title | DC and RF Performance of 50 nm Gate Pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy |
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