DC and RF Performance of 50 nm Gate Pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy

• Published in: Japanese Journal of Applied Physics Vol. 39; no. 7B; p. L720
• Main Authors: Masataka Higashiwaki, Masataka Higashiwaki, Takahiro Kitada, Takahiro Kitada, Toyohiro Aoki, Toyohiro Aoki, Satoshi Shimomura, Satoshi Shimomura, Yoshimi Yamashita, Yoshimi Yamashita, Akira Endoh, Akira Endoh, Kohki Hikosaka, Kohki Hikosaka, Takashi Mimura, Takashi Mimura, Toshiaki Matsui, Toshiaki Matsui, Satoshi Hiyamizu, Satoshi Hiyamizu
• Format: Journal Article
• Language: English
• Published: 01.07.2000
• DOI: 10.1143/JJAP.39.L720
• ISSN: 0021-4922

In this paper, we report on the material and device characteristics of pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy. The electron Hall mobility in the (411)A HEMT was 2.5 times higher at 15 K and 1.3 times higher even at room temperature than that in a HEMT grown on a conventional (100) InP substrate. The (411)A HEMTs with 50 nm gates provided excellent DC and RF device characteristics.The maximum transconductance was as high as 1.1 S/mm, and the cutoff frequency reached 355 GHz.