DC and RF Performance of 50 nm Gate Pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
In this paper, we report on the material and device characteristics of pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy. The electron Hall mobility in the (411)A HEMT was 2.5 times higher a...
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Published in | Japanese Journal of Applied Physics Vol. 39; no. 7B; p. L720 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.07.2000
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Online Access | Get full text |
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Summary: | In this paper, we report on the material and device characteristics of pseudomorphic In
0.7
Ga
0.3
As/In
0.52
Al
0.48
As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy. The electron Hall mobility in the (411)A HEMT was 2.5 times higher at 15 K and 1.3 times higher even at room temperature than that in a HEMT grown on a conventional (100) InP substrate. The (411)A HEMTs with 50 nm gates provided excellent DC and RF device characteristics.The maximum transconductance was as high as 1.1 S/mm, and the cutoff frequency reached 355 GHz. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.39.L720 |