Metalorganic Chemical Vapor Deposition of Conductive CaRuO 3 Thin Films
CaRuO 3 thin films expected for use as an electrode of ferroelectric random-access memory were prepared for the first time by metalorganic chemical vapor deposition (MOCVD) from the bis(dipivaloylmethanato)calcium(tetraen) [Ca(C 11 H 29 O 2 ) 2 (C 8 H 23 N 5 ) x ]–tris(dipivaloylmethanato)ruthenium...
Saved in:
| Published in | Japanese Journal of Applied Physics Vol. 39; no. 5R; p. 2780 |
|---|---|
| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
01.05.2000
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | CaRuO
3
thin films expected for use as an electrode of ferroelectric
random-access memory were prepared for the first time by metalorganic chemical
vapor deposition (MOCVD) from the bis(dipivaloylmethanato)calcium(tetraen)
[Ca(C
11
H
29
O
2
)
2
(C
8
H
23
N
5
)
x
]–tris(dipivaloylmethanato)ruthenium [Ru(C
11
H
29
O
2
)
3
]–O
2
and the bis(dipivaloylmethanato)calcium(tetraen) [Ca(C
11
H
29
O
2
)
2
(C
8
H
23
N
5
)
x
]–bis(ethylcyclipentadienyl)ruthenium Ru[(C
5
H
4
)(C
2
H
5
)]
2
–O
2
systems. Epitaxial films were obtained on (100)LaAlO
3
and (100)SrTiO
3
substrates at 750°C, while randomly oriented films were obtained on a (100)MgO
substrate. The resistivity of these films was about
200 µΩ·cm, and was confirmed to be independent of film
thickness ranging from 70 to 300 nm. This value is lower than that of SrRuO
3
thin films, about 280 µΩ·cm. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.39.2780 |