X-Band Mixing Performance of Y 1 Ba 2 Cu 3 O 7-x Step-Edge Junction

The X-band mixing performance of some step-edge junctions using Y 1 Ba 2 Cu 3 O 7- x films has been evaluated. The mixing conversion efficiency (η) depends predominantly on normal resistance ( R n ) of a junction, which determines impedance matching for the microstrip signal line. Under constant imp...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 33; no. 9R; p. 4880
Main Authors Yoshikawa, Shuichi, Yamaguchi, Keiichi, Takenaka, Tsuyoshi, Fujino, Shuichi, Mitsuzuka, Tsutomu, Hayashi, Kunihiko, Katsumi Suzuki, Katsumi Suzuki, Youichi Enomoto, Youichi Enomoto
Format Journal Article
LanguageEnglish
Published 01.09.1994
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Summary:The X-band mixing performance of some step-edge junctions using Y 1 Ba 2 Cu 3 O 7- x films has been evaluated. The mixing conversion efficiency (η) depends predominantly on normal resistance ( R n ) of a junction, which determines impedance matching for the microstrip signal line. Under constant impedance conditions obtained from temperature dependence of R n , conversion efficiency (η) increases with increase of the I c R n product. In the range of 12 GHz, however, the efficiency is saturated above the I c R n product of 1 mV. This tendency agrees with our simulation based on the resistively shunted junction (RSJ) model.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.4880