Current-Temperature Characteristics of Low-Temperature-Sputtered (Ba,Sr)TiO 3 Films Post Treated by Rapid Thermal Annealing

This work reports the current-temperature characteristics of the low-temperature-sputtered (Ba 0.8 Sr 0.2 )TiO 3 (BST) film post treated by rapid thermal annealing (RTA) in O 2 ambient. The top electrode was biased under negative/positive voltage to investigate the interface properties of the Pt/BST...

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Published inIntegrated ferroelectrics Vol. 47; no. 1; pp. 217 - 225
Main Authors Shye, Der-Chi, Chen, Jyh-Shin, Kuo, Meng-Wei, Chou, Bruce C. S., Jan, Chueh-Kuei, Wu, Mei-Fang, Chiou, Bi-Shiou, Cheng, Huang-Chung
Format Journal Article
LanguageEnglish
Published Taylor & Francis Group 01.01.2002
Subjects
(Ba 0.8 Sr 0.2 )TiO 3
Heywang Barrier
Ntcr
Ptcr
Rapid Thermal Annealing (RTA)
Schottky Emission
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Summary:This work reports the current-temperature characteristics of the low-temperature-sputtered (Ba 0.8 Sr 0.2 )TiO 3 (BST) film post treated by rapid thermal annealing (RTA) in O 2 ambient. The top electrode was biased under negative/positive voltage to investigate the interface properties of the Pt/BST/Pt multifilm. As the results, the current density of the RTA-treated BST film was greatly reduced owing to compensation of oxygen vacancies. The RTA-treated BST thin film biased at negative voltage exhibits a negative temperature-coefficient-resistivity (NTCR) behavior, but, intriguingly, that biased at positive voltage reveals a positive temperature-coefficient-resistivity (PTCR) behavior. According to the leakage current analysis, the Schottky emission dominates the negative biased current at upper interface, but the Heywang barrier scattering confines the positive biased current.
ISSN:1058-4587
1607-8489
DOI:10.1080/713718282