Current-Temperature Characteristics of Low-Temperature-Sputtered (Ba,Sr)TiO 3 Films Post Treated by Rapid Thermal Annealing
This work reports the current-temperature characteristics of the low-temperature-sputtered (Ba 0.8 Sr 0.2 )TiO 3 (BST) film post treated by rapid thermal annealing (RTA) in O 2 ambient. The top electrode was biased under negative/positive voltage to investigate the interface properties of the Pt/BST...
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Published in | Integrated ferroelectrics Vol. 47; no. 1; pp. 217 - 225 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Taylor & Francis Group
01.01.2002
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Subjects | |
Online Access | Get full text |
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Summary: | This work reports the current-temperature characteristics of the low-temperature-sputtered (Ba 0.8 Sr 0.2 )TiO 3 (BST) film post treated by rapid thermal annealing (RTA) in O 2 ambient. The top electrode was biased under negative/positive voltage to investigate the interface properties of the Pt/BST/Pt multifilm. As the results, the current density of the RTA-treated BST film was greatly reduced owing to compensation of oxygen vacancies. The RTA-treated BST thin film biased at negative voltage exhibits a negative temperature-coefficient-resistivity (NTCR) behavior, but, intriguingly, that biased at positive voltage reveals a positive temperature-coefficient-resistivity (PTCR) behavior. According to the leakage current analysis, the Schottky emission dominates the negative biased current at upper interface, but the Heywang barrier scattering confines the positive biased current. |
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ISSN: | 1058-4587 1607-8489 |
DOI: | 10.1080/713718282 |