Remarkably improved photo-charging and dark-discharging current in a faradaic junction solar rechargeable device by regulating the morphology of a semiconductor

• Published in: Journal of physics. D, Applied physics Vol. 57; no. 48; pp. 485502 - 485508
• Main Authors: Wan, Ziyi, Jiang, Dongjian, Zheng, Yuzhan, Fu, Ye, Sun, Xiao, Wang, Bo, Cui, Cuixia, Yao, Changping, Luo, Wenjun, Zou, Zhigang
• Format: Journal Article
• Language: English
• Published: IOP Publishing 06.12.2024
• Subjects: electron transfer paths; nanostructured Si; PNMPy
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/ad714f

Abstract Two-electrode solar rechargeable devices can converse and store solar energy without external bias. However, the photo-charging and dark-discharging current of these devices is low and limits their practical applications. Here, the photo-charging and dark-discharging current of Si/poly(N-methylpyrrole) (PNMPy) photoanode increases 21 and 10 times by preparing nanostructured Si semiconductor, up to 5.09 and 2.06 mA cm −2 , respectively. Further studies suggest that the improved current comes from higher separation efficiency of photo-generated carriers and new electron transfer paths on the surface of nanostructured Si. Moreover, a solar rechargeable device of Si/PNMPy/H 2 SO 4 (aq)/WO 3 /FTO was prepared, which indicated good cyclic stability. These results deepen our understanding on the current in solar rechargeable devices and offer guidance for the design of other high-performance devices.