SiO2∕AlGaN∕GaN MOSHFET with 0.7 [micro sign]m gate-length and fmax∕fT of 40∕24 GHz

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Bibliographic Details
Published inElectronics letters Vol. 41; no. 11; p. 667
Main Authors Bernát, J., Gregušová, D., Heidelberger, G., Fox, A., Marso, M., Lüth, H., Kordoš, P.
Format Journal Article
LanguageEnglish
Published 2005
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ISSN:0013-5194
DOI:10.1049/el:20050556