Room-temperature intersubband emission of GaN/AlN quantum wells at =2.3 [micro sign]m

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Bibliographic Details
Published inElectronics letters Vol. 42; no. 22; p. 1308
Main Authors Nevou, L., Julien, F.H., Colombelli, R., Guillot, F., Monroy, E.
Format Journal Article
LanguageEnglish
Published 2006
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ISSN:0013-5194
DOI:10.1049/el:20062282