APA (7th ed.) Citation

Kim, D., Noh, J., Choi, W., & Shim, D. (2025). Biased Poly-gate-separated Schottky Barrier Diode in CMOS. Journal of semiconductor technology and science, 25(4), 414-419. https://doi.org/10.5573/JSTS.2025.25.4.414

Chicago Style (17th ed.) Citation

Kim, Deokgi, Jaehyun Noh, Wooyeol Choi, and Dongha Shim. "Biased Poly-gate-separated Schottky Barrier Diode in CMOS." Journal of Semiconductor Technology and Science 25, no. 4 (2025): 414-419. https://doi.org/10.5573/JSTS.2025.25.4.414.

MLA (9th ed.) Citation

Kim, Deokgi, et al. "Biased Poly-gate-separated Schottky Barrier Diode in CMOS." Journal of Semiconductor Technology and Science, vol. 25, no. 4, 2025, pp. 414-419, https://doi.org/10.5573/JSTS.2025.25.4.414.