Doped, Two-Dimensional, Semiconducting Transition Metal Dichalcogenides in Low-Concentration Regime

Doping semiconductors is crucial for controlling their carrier concentration and enabling their application in devices such as diodes and transistors. Furthermore, incorporating magnetic dopants can induce magnetic properties in semiconductors, paving the way for spintronic devices without an extern...

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Bibliographic Details
Published inCrystals (Basel) Vol. 14; no. 10; p. 832
Main Authors Baithi, Mallesh, Duong, Dinh Loc
Format Journal Article
LanguageEnglish
Published 25.09.2024
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Summary:Doping semiconductors is crucial for controlling their carrier concentration and enabling their application in devices such as diodes and transistors. Furthermore, incorporating magnetic dopants can induce magnetic properties in semiconductors, paving the way for spintronic devices without an external magnetic field. This review highlights recent advances in growing doped, two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors through various methods, like chemical vapor deposition, molecular beam epitaxy, chemical vapor transport, and flux methods. It also discusses approaches for achieving n- and p-type doping in 2D TMDC semiconductors. Notably, recent progress in doping 2D TMDC semiconductors to induce ferromagnetism and the development of quantum emitters is covered. Experimental techniques for achieving uniform doping in chemical vapor deposition and chemical vapor transport methods are discussed, along with the challenges, opportunities, and potential solutions for growing uniformly doped 2D TMDC semiconductors.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst14100832