Ultrasensitive 1D field-effect phototransistors: CH 3 NH 3 PbI 3 nanowire sensitized individual carbon nanotubes

Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH 3 NH 3 PbI 3 nanowires (MAPbI 3 NWs). These devices represent light responsivities of R = 7.7 × 10 5 A W −1 under low-lighting conditions in the nW mm −2 range, unprecedented among CNT-based ph...

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Bibliographic Details
Published inNanoscale Vol. 8; no. 9; pp. 4888 - 4893
Main Authors Spina, M., Náfrádi, B., Tóháti, H. M., Kamarás, K., Bonvin, E., Gaal, R., Forró, L., Horváth, E.
Format Journal Article
LanguageEnglish
Published 2016
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Summary:Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH 3 NH 3 PbI 3 nanowires (MAPbI 3 NWs). These devices represent light responsivities of R = 7.7 × 10 5 A W −1 under low-lighting conditions in the nW mm −2 range, unprecedented among CNT-based photodetectors. At high incident power (∼1 mW mm −2 ), light soaking results in a negative photocurrent, turning the device insulating. We interpret the phenomenon as a result of efficient free photoexcited charge generation and charge transfer of photoexcited holes from the perovskite to the carbon nanotube. The charge transfer improves conductance by increasing the number of carriers, but leaves electrons behind. At high illumination intensity their random electrostatic potential quenches mobility in the nanotube.
ISSN:2040-3364
2040-3372
DOI:10.1039/C5NR06727H