Flexible self-powered photoelectrochemical-type photodetectors based on Bi 2 O 2 S/GO composites
Flexible photodetectors (PDs) have attracted great attention in the fields of environmental monitoring, image sensing and self-powered integrated electronic devices due to their advantages of wearability and bendability. Therefore, in this work a photoelectrochemical (PEC) photodetector was construc...
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Published in | Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 11; no. 21; pp. 6928 - 6934 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.06.2023
|
Online Access | Get full text |
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Summary: | Flexible photodetectors (PDs) have attracted great attention in the fields of environmental monitoring, image sensing and self-powered integrated electronic devices due to their advantages of wearability and bendability. Therefore, in this work a photoelectrochemical (PEC) photodetector was constructed based on a quasi-solid-state electrolyte and a bismuth oxysulfide (Bi
2
O
2
S)/graphene oxide (GO) composite structure. This detector was fabricated using a simple method, and was more convenient to use than a liquid electrolyte-based photodetector. Moreover, compared with the single Bi
2
O
2
S nanosheets, the composite material exhibited more excellent self-powered ability and mechanical performance. The photoelectrochemical test showed that under 0 V bias voltage, the photocurrent density of the composite material reached 4 μA cm
−2
, which was about 6 times that of the single material. In addition, after bending at different angles for 1000 seconds, the photocurrent of the Bi
2
O
2
S/GO photodetector based on the quasi-solid-state electrolyte hardly decayed. The results show that the flexible photoelectrochemical photodetector based on Bi
2
O
2
S/GO exhibits robust photoelectric performance even under bending conditions, and demonstrates excellent stability in long-term photocurrent tests. Therefore, Bi
2
O
2
S/GO is a candidate material with excellent performance and great application potential in the photodetector field. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/D3TC01045G |