Pt/WO 3 /FTO memristive devices with recoverable pseudo-electroforming for time-delay switches in neuromorphic computing

A recoverable pseudo-electroforming process was discovered in Pt/WO 3 /FTO devices. Unlike conventional electroforming, which is usually destructive, pseudo-electroforming can be recovered when the electrical stimulation is removed. Furthermore, the time-dependent recovery process can be tuned by di...

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Bibliographic Details
Published inPhysical chemistry chemical physics : PCCP Vol. 18; no. 14; pp. 9338 - 9343
Main Authors Shi, Tuo, Yin, Xue-Bing, Yang, Rui, Guo, Xin
Format Journal Article
LanguageEnglish
Published 2016
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Summary:A recoverable pseudo-electroforming process was discovered in Pt/WO 3 /FTO devices. Unlike conventional electroforming, which is usually destructive, pseudo-electroforming can be recovered when the electrical stimulation is removed. Furthermore, the time-dependent recovery process can be tuned by diverse voltage pulses applied in pseudo-electroforming; therefore, the device can be used as a time-delay switch in memristor-based neuromorphic networks. This “volatile” electroforming process can be attributed to the high oxygen vacancy concentration in the fluorine-doped tin oxide (FTO) bottom electrode, which acts as a non-blocking electrode in the resistive switching.
ISSN:1463-9076
1463-9084
DOI:10.1039/C5CP07675G