Flux growth and 266 nm generation of a GdAl 3 (BO 3 ) 4 crystal
The study focused on optimization of the growing conditions of GdAl 3 (BO 3 ) 4 (GAB). Using Al 2 O 3 –B 2 O 3 –Li 2 O–NaF as a flux, inclusion-free GAB crystals with sizes up to 18 × 18 × 35 mm 3 were successfully grown using the top-seeded solution growth technique. The preparation of the starting...
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| Published in | CrystEngComm Vol. 18; no. 16; pp. 2965 - 2968 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
2016
|
| Online Access | Get full text |
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| Summary: | The study focused on optimization of the growing conditions of GdAl
3
(BO
3
)
4
(GAB). Using Al
2
O
3
–B
2
O
3
–Li
2
O–NaF as a flux, inclusion-free GAB crystals with sizes up to 18 × 18 × 35 mm
3
were successfully grown using the top-seeded solution growth technique. The preparation of the starting materials, flux selection and optimization of the growing parameters are discussed in the study. Laser radiation at 266 nm was generated for the first time by a type I phase-matching GAB crystal. |
|---|---|
| ISSN: | 1466-8033 1466-8033 |
| DOI: | 10.1039/C6CE00611F |