Role of p O 2 and film microstructure on the memristive properties of La 2 NiO 4+ δ /LaNiO 3− δ bilayers
LaNiO 3 /La 2 NiO 4 bilayers deposited at varying p O 2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO 3 /La 2 NiO 4 /Pt devices. The devices deposited at low p O 2 showed the largest memristance. We p...
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Published in | Journal of materials chemistry. A, Materials for energy and sustainability Vol. 10; no. 12; pp. 6523 - 6530 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
22.03.2022
|
Online Access | Get full text |
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Summary: | LaNiO
3
/La
2
NiO
4
bilayers deposited at varying
p
O
2
conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO
3
/La
2
NiO
4
/Pt devices. The devices deposited at low
p
O
2
showed the largest memristance. We propose this is due to the formation of a p-type Schottky contact between LaNiO
3
and La
2
NiO
4
, where the extent of its carrier depletion width can be modulated by the electric-field induced drift of interstitial oxygen ions acting as mobile acceptor dopants in La
2
NiO
4
. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/D1TA10296F |