Role of p O 2 and film microstructure on the memristive properties of La 2 NiO 4+ δ /LaNiO 3− δ bilayers

LaNiO 3 /La 2 NiO 4 bilayers deposited at varying p O 2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO 3 /La 2 NiO 4 /Pt devices. The devices deposited at low p O 2 showed the largest memristance. We p...

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Published inJournal of materials chemistry. A, Materials for energy and sustainability Vol. 10; no. 12; pp. 6523 - 6530
Main Authors Maas, Klaasjan, Wulles, Chloé, Caicedo Roque, Jose Manuel, Ballesteros, Belén, Lafarge, Valentin, Santiso, José, Burriel, Mónica
Format Journal Article
LanguageEnglish
Published 22.03.2022
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Summary:LaNiO 3 /La 2 NiO 4 bilayers deposited at varying p O 2 conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO 3 /La 2 NiO 4 /Pt devices. The devices deposited at low p O 2 showed the largest memristance. We propose this is due to the formation of a p-type Schottky contact between LaNiO 3 and La 2 NiO 4 , where the extent of its carrier depletion width can be modulated by the electric-field induced drift of interstitial oxygen ions acting as mobile acceptor dopants in La 2 NiO 4 .
ISSN:2050-7488
2050-7496
DOI:10.1039/D1TA10296F