Influence of the interface in quantum corrections on the low-temperature resistance of La 2/3 Sr 1/3 MnO 3 trilayer masking thin films

• Published in: Physical chemistry chemical physics : PCCP Vol. 17; no. 19; pp. 12826 - 12832
• Main Authors: Jin, Yuan, Cui, Xiao-Peng, Han, Wei-Hua, Cao, Shi-Xun, Gao, Yu-Ze, Zhang, Jin-Cang
• Format: Journal Article
• Language: English
• Published: 2015
• ISSN: 1463-9076; 1463-9084
• DOI: 10.1039/C5CP00842E

We report the low-temperature resistance upturn in sandwiched structures of La 2/3 Sr 1/3 MnO 3 /ZrO 2 /La 2/3 Sr 1/3 MnO 3 and La 2/3 Sr 1/3 MnO 3 /LaMnO 3 /La 2/3 Sr 1/3 MnO 3 , while it disappeared when the interlayer was replaced by YBa 2 Cu 3 O 7 . The experimental data have been analyzed qualitatively and quantitatively. The results show that the low temperature resistance upturn is mainly due to the quantum correction effects driven by the weak localization and the electron–electron interaction in such a strongly correlated system, and the contribution of each factor varies with grain boundaries. Moreover, the resistance upturns are suppressed by a local magnetic field. These findings will help to further understand the physical mechanism of low-temperature resistance upturn in colossal magnetoresistance manganites. Furthermore, it is also helpful to reveal the intrinsic transport mechanism at the interfaces of semiconductor/ferromagnetism and antiferromagnetism/ferromagnetism.