High-concentration Er 3+ ion singly doped GaTaO 4 single crystal for promising all-solid-state green laser and solid-state lighting applications

• Published in: CrystEngComm Vol. 24; no. 4; pp. 818 - 827
• Main Authors: Ding, Shoujun, Ren, Hao, Liu, Wenpeng, He, Aifeng, Tang, Xubing, Zhang, Qingli
• Format: Journal Article
• Language: English
• Published: 25.01.2022
• ISSN: 1466-8033; 1466-8033
• DOI: 10.1039/D1CE01333E

Exploring new visible laser crystals is of great significance to the development of diode pumped all-solid-state visible lasers and solid-state lighting. In this work, a high concentration (10 at%) Er 3+ ion singly doped GdTaO 4 single crystal with high quality as a promising visible laser crystal was grown successfully by the Czochralski method. The structure of the crystal was determined to be a monoclinic structure with the space group C 2/ c by powder and single-crystal X-ray diffraction characterization techniques. The absorption and blue and violet light excited emission spectra of the crystal were obtained and analyzed. A strong emission band centered at 555 nm was observed under excitation at both 450 nm and 377 nm. The absorption cross-section at 450 nm and emission cross-section at 555 nm were calculated to be 4.60 × 10 −21 and 4.57 × 10 −21 cm 2 , respectively, which are comparable to those of other promising InGaN diode pumped visible laser crystals doped with rare earth ions (Er 3+ , Dy 3+ and Pr 3+ ). Under 450 nm or 355 nm laser excitation, the crystal emits strong green fluorescence. A 380 nm LED chip pumped prototype device was fabricated using the crystal, which exhibited green light under the driving current. Besides, the green and red upconversion luminescence of Er 3+ in the GdTaO 4 single crystal was found to be a two-photon process under the excitation of a 980 nm laser. All these results strongly recommend that the 10 at% Er 3+ ion doped GdTaO 4 crystal is very promising for diode pumped green lasers and probably useful for solid-state lighting.