Effects of BaCu(B 2 O 5 ) additives on the crystal structures and dielectric properties of CaMgGeO 4 ceramics for LTCC applications
A CaMgGeO 4 (CMG) ceramic with an olivine structure was fabricated by the traditional solid-phase reaction method; this material was dense at 1300 °C/6 h and exhibited excellent dielectric properties ( ε r = 6.83, Q × f = 125 432, f = 14.9 GHz). The effects of BaCu(B 2 O 5 ) (BCB) on the sintering c...
Saved in:
Published in | CrystEngComm Vol. 22; no. 28; pp. 4768 - 4777 |
---|---|
Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
20.07.2020
|
Online Access | Get full text |
Cover
Loading…
Summary: | A CaMgGeO
4
(CMG) ceramic with an olivine structure was fabricated by the traditional solid-phase reaction method; this material was dense at 1300 °C/6 h and exhibited excellent dielectric properties (
ε
r
= 6.83,
Q
×
f
= 125 432,
f
= 14.9 GHz). The effects of BaCu(B
2
O
5
) (BCB) on the sintering characteristics, crystal structures and microwave dielectric properties of CMG systems were studied. BCB can effectively reduce the sintering temperature (
T
s
) of the CMG ceramic, and when the amount of BCB is 16 wt%, the
T
s
can be lowered to 875 °C. The CMG ceramic containing 8 wt% BCB shows excellent dielectric properties (
ε
r
= 7.01,
Q
×
f
= 73 962,
f
= 14.8 GHz) at 940 °C/6 h. Raman mode 11 moves to a lower wavenumber with increasing BCB content, while the BCB content has the opposite effect on the dielectric constant; however, the full width at half-maximum (FWHM) value of mode 11 correlates negatively with the
Q
×
f
values. In addition, the change in the packing fraction is similar to that in the
Q
×
f
values with increasing BCB content. A decrease in the packing fraction means an increase in the vibrational space and possibly non-resonance, which in turn reduces the
Q
×
f
value. In addition, the ceramic has good chemical compatibility with the Ag electrode, indicating broad application prospects in low-temperature co-fired ceramics (LTCCs) for CMG. |
---|---|
ISSN: | 1466-8033 1466-8033 |
DOI: | 10.1039/D0CE00620C |