Gate voltage-dependent magnetoresistance of Zn 0.8 Co 0.2 O:H

The magnetoresistance of a hydrogenated Zn 0.8 Co 0.2 O film with an inverted thin film transistor structure was measured at 7 K, in magnetic fields up to 3 T in order to verify the magnetoresistance dependency on carrier density. The gate voltage-dependent magnetoresistance was measured between −15...

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Bibliographic Details
Published inRSC advances Vol. 6; no. 100; pp. 97555 - 97559
Main Authors Cheon, Miyeon, Cho, Yong Chan, Cho, Chae-Ryong, Park, Chul Hong, Jeong, Se-Young
Format Journal Article
LanguageEnglish
Published 2016
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Summary:The magnetoresistance of a hydrogenated Zn 0.8 Co 0.2 O film with an inverted thin film transistor structure was measured at 7 K, in magnetic fields up to 3 T in order to verify the magnetoresistance dependency on carrier density. The gate voltage-dependent magnetoresistance was measured between −15 V and 15 V. A large positive magnetoresistance was identified at all gate biases. Changes in positive gate voltage did not result in significant changes in the magnetoresistance; however, an increase in negative gate voltage resulted in an increase in magnetoresistance and zero field resistivity. The magnetoresistance comprises a positive component, as a result of quantum conductivity correction due to the s–d exchange interaction, and a negative component induced by weak localization. The gate voltage-dependence of the positive and negative magnetoresistances was described by the density of states for ZnCoO:H.
ISSN:2046-2069
2046-2069
DOI:10.1039/C6RA20787A