Growth and electrical properties of high‐Curie point rhombohedral Mn‐Pb(In 1/2 Nb 1/2 )O 3 ‐Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 thin films

• Published in: Journal of the American Ceramic Society Vol. 104; no. 1; pp. 313 - 321
• Main Authors: Li, Zihao, Wang, Yuchun, Tang, Yanxue, Zhao, Xiangyong, Wang, Tao, Duan, Zhihua, Wang, Feifei, Li, Xiaobing, Leung, Chung Ming, Fang, Bijun
• Format: Journal Article
• Language: English
• Published: 01.01.2021
• ISSN: 0002-7820; 1551-2916
• DOI: 10.1111/jace.17456

Abstract High‐quality ternary relaxor ferroelectric (100)‐oriented Mn‐doped 0.36Pb(In 1/2 Nb 1/2 )O 3 ‐0.36Pb(Mg 1/3 Nb 2/3 )O 3 ‐0.28PbTiO 3 (Mn‐PIMNT) thin films were grown on SrRuO 3 ‐buffered SrTiO 3 single‐crystal substrate in a wide deposition temperature range of 550‐620°C using the pulsed laser deposition method. The phase structure, ferroelectric, dielectric, piezoelectric properties, and nanoscale domain evolution were studied. Under the deposition temperature of 620°C, the ferroelectric hysteresis loops and current‐voltage curves showed that the film owned significantly enhanced remnant ferroelectric polarization of 34.5 μC/cm 2 and low leakage current density of 2.7 × 10 −10  A/cm 2 . Moreover fingerprint‐type nanosized domain patterns with polydomain structures and well‐defined macroscopic piezoelectric properties with a high normalized strain constant of 40 pm/V was obtained. Under in situ DC electric field, the domain evolution was investigated and 180° domain reversal was observed through piezoelectric force microscope. These global electrical properties make the current Mn‐PIMNT thin films very promising in piezoelectric MEMS applications.