Growth and electrical properties of high‐Curie point rhombohedral Mn‐Pb(In 1/2 Nb 1/2 )O 3 ‐Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 thin films
Abstract High‐quality ternary relaxor ferroelectric (100)‐oriented Mn‐doped 0.36Pb(In 1/2 Nb 1/2 )O 3 ‐0.36Pb(Mg 1/3 Nb 2/3 )O 3 ‐0.28PbTiO 3 (Mn‐PIMNT) thin films were grown on SrRuO 3 ‐buffered SrTiO 3 single‐crystal substrate in a wide deposition temperature range of 550‐620°C using the pulsed la...
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Published in | Journal of the American Ceramic Society Vol. 104; no. 1; pp. 313 - 321 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.01.2021
|
Online Access | Get full text |
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Summary: | Abstract
High‐quality ternary relaxor ferroelectric (100)‐oriented Mn‐doped 0.36Pb(In
1/2
Nb
1/2
)O
3
‐0.36Pb(Mg
1/3
Nb
2/3
)O
3
‐0.28PbTiO
3
(Mn‐PIMNT) thin films were grown on SrRuO
3
‐buffered SrTiO
3
single‐crystal substrate in a wide deposition temperature range of 550‐620°C using the pulsed laser deposition method. The phase structure, ferroelectric, dielectric, piezoelectric properties, and nanoscale domain evolution were studied. Under the deposition temperature of 620°C, the ferroelectric hysteresis loops and current‐voltage curves showed that the film owned significantly enhanced remnant ferroelectric polarization of 34.5 μC/cm
2
and low leakage current density of 2.7 × 10
−10
A/cm
2
. Moreover fingerprint‐type nanosized domain patterns with polydomain structures and well‐defined macroscopic piezoelectric properties with a high normalized strain constant
of 40 pm/V was obtained. Under in situ DC electric field, the domain evolution was investigated and 180° domain reversal was observed through piezoelectric force microscope. These global electrical properties make the current Mn‐PIMNT thin films very promising in piezoelectric MEMS applications. |
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ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/jace.17456 |