Electronic Structure and Luminescence Properties of Phosphor Li 8 Bi 2 ( MoO 4 ) 7 : Dy 3
Dy 3+ ‐doped Li 8 Bi 2 ( MoO 4 ) 7 (LBM: Dy 3+ ) white‐emitting phosphors have been prepared by sol‐gel method at about 400~550°C low temperature. The electronic structure of Li 8 Bi 2 ( MoO 4 ) 7 is also calculated using density functional theory. The calculation results show that Li 8 Bi 2 ( MoO 4...
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| Published in | Journal of the American Ceramic Society Vol. 97; no. 6; pp. 1878 - 1882 |
|---|---|
| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
| Published |
01.06.2014
|
| Online Access | Get full text |
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| Summary: | Dy
3+
‐doped
Li
8
Bi
2
(
MoO
4
)
7
(LBM:
Dy
3+
) white‐emitting phosphors have been prepared by sol‐gel method at about 400~550°C low temperature. The electronic structure of
Li
8
Bi
2
(
MoO
4
)
7
is also calculated using density functional theory. The calculation results show that
Li
8
Bi
2
(
MoO
4
)
7
has a direct band gap with 2.63
eV
, the top of the valence band and the bottom of the conduction band are dominated by O 2
p
and Mo 4
d
, respectively. The effect from
Bi
3+
ions is so weak that it could be neglected, which is also be proved by the experimental results. The crystal structure and luminescent properties of the obtained phosphors are characterized by powder X‐ray diffraction and photoluminescence spectrum, respectively. Photoluminescence results showed that the obtained phosphors can be excited efficiently by near‐UV 387 nm and generated white light emission. The yellow/blue ratio and Commission International de I'Eclairage color coordinates could be tuned by adjusting the concentration of
Dy
3+
. Results demonstrated that
Li
8
Bi
2
(
MoO
4
)
7
:
Dy
3+
was a potential white light‐emitting phosphor candidate for NUV‐based w‐LEDs. |
|---|---|
| ISSN: | 0002-7820 1551-2916 |
| DOI: | 10.1111/jace.12863 |