Influence of p ‐Type Double‐Doping on the Crystals and Electronic Structures of Two Polar Intermetallics: La 4.57(1) Li 0.43 Ge 3.80(3) In 0.20 and Nd 4.32(1) Li 0.68 Ge 3.87(3) In 0.13

Two quaternary polar intermetallic compounds La 4.57(1) Li 0.43 Ge 3.80(3) In 0.20 and Nd 4.32(1) Li 0.68 Ge 3.87(3) In 0.13 were synthesized using a conventional high temperature synthetic method as we attempted to introduce the p ‐type double‐doping of Li and In for RE and Ge in the RE 5‐ x Li x G...

Full description

Saved in:
Bibliographic Details
Published inBulletin of the Korean Chemical Society Vol. 39; no. 9; pp. 1066 - 1072
Main Authors Jeon, Jieun, Lee, Junsu, You, Tae‐Soo
Format Journal Article
LanguageEnglish
Published 01.09.2018
Online AccessGet full text

Cover

Loading…
More Information
Summary:Two quaternary polar intermetallic compounds La 4.57(1) Li 0.43 Ge 3.80(3) In 0.20 and Nd 4.32(1) Li 0.68 Ge 3.87(3) In 0.13 were synthesized using a conventional high temperature synthetic method as we attempted to introduce the p ‐type double‐doping of Li and In for RE and Ge in the RE 5‐ x Li x Ge 4‐ y (RE = rare‐earth metals) system, and their crystal structures were characterized by single crystal X‐ray diffraction experiments. The two title compounds crystallize in the orthorhombic space group Pnma (Pearson code oP 16, Z = 4) with six crystallographically independent asymmetric atomic sites and adopt the Gd 5 Si 4 ‐type structure. Overall crystal structures of two isotypic title compounds can be described as a 1:1 assembly of the hypothetical 2‐dimensional (2D) RE 2 (RE/Li)(In/Ge) 2 layered structure adopting the Mo 2 FeB 2 ‐type structure and the dumbbell‐shaped inter‐slab (In/Ge) 2 dimers bridging two such neighboring 2D layers along the crystallographic b ‐axis direction. The observed “direction selective” structural transformation from the Sm 5 Ge 4 ‐type to the Gd 5 Si 4 ‐type structure can be understood as a result of the simultaneous double‐doping by the relatively smaller amount of Li substitution for La at the RE3 site than that in the La 4 LiGe 4 and the partial In substitution for Ge at both of the M 1 and M 3 sites. The site‐preference of In for two particular anionic sites were thoroughly studied using four hypothetical La 4 LiGe 3 In models having different atomic arrangements by the tight‐binding linear muffin‐tin orbital (TB‐LMTO) method. The overall electronic structure and individual chemical bonding influenced by the given double‐doping were also discussed on the basis of the density of states (DOS) and crystal orbital Hamilton population (COHP) curves analyses.
ISSN:1229-5949
1229-5949
DOI:10.1002/bkcs.11551