Low‐temperature sintered 0.5Pb(Ni 1/3 Nb 2/3 )O 3 –0.16PbZrO 3 –0.34PbTiO 3 piezoelectric textured ceramics by Li 2 CO 3 addition

• Published in: Journal of the American Ceramic Society Vol. 107; no. 6; pp. 4178 - 4196
• Main Authors: Cho, Seong Wook, Baik, Jeong Min, Park, Hyeon Jun, Park, Kwi‐Il, Jeong, Young Hun
• Format: Journal Article
• Language: English
• Published: 01.06.2024
• ISSN: 0002-7820; 1551-2916
• DOI: 10.1111/jace.19720

Abstract BaTiO 3 (BT)‐templated 0.5Pb(Ni 1/3 Nb 2/3 )O 3 –0.16PbZrO 3 –0.34PbTiO 3 with 0.2 wt% Li 2 CO 3 (PNN‐PZT + LC) ceramics were successfully sintered at temperatures less than 1050°C. Their structural, ferroelectric, and piezoelectric properties were systematically investigated as a function of amount of BT, which ranged from 2 to 10 vol%. The PNN‐PZT + LC ceramics sintered at 1000°C showed highly textured morphologies with preferred (0 0 1) orientation, having Lotgering factors ( f L ) of 85% and higher. When sintering temperature exceeded 1000°C, the epitaxial grain growth of PNN‐PZT + LC rhombohedral phase, driven by BT templates, was hindered by dramatically enlarged matrix grains. In situ X‐ray diffractometry analyses are performed to identify phase transition behavior depending on temperature. Properties of d 33 (1180 pC/N) and k p (80.3%) were obtained for the 2 vol% BT‐templated PNN‐PZT + LC ceramic sintered at 1000°C, along with ferroelectric properties of 2 P r (56.1 μC/cm 2 ) and 2 E c (1.26 kV/mm) at 3.5 kV/mm. High‐resolution transmission electron microscopy and piezo‐response force microscopy were utilized to investigate domain structure and epitaxial grain growth between templated BaTiO 3 and matrix ceramics. The low‐temperature sintered specimen showed an extremely large electrostrain characteristic ( d 33 * ) of 1215 pm/V at 1 kV/mm. Furthermore, textured multilayer piezoelectric actuators exhibited higher actuator performance and lower energy loss compared to untextured multilayer piezoelectric actuators, indicating their potential for use in piezoelectric actuator devices.