Comparative Studies of δ-Doped In[sub 0.45]Al[sub 0.55]As∕In[sub 0.53]Ga[sub 0.47]As∕GaAs Metamorphic HEMTs with Au, Ti∕Au, Ni∕Au, and Pt∕Au Gates

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 153; no. 11; p. G996
Main Authors Su, Ke-Hua, Hsu, Wei-Chou, Lee, Ching-Sung, Chen, I-Liang, Chen, Yeong-Jia, Wu, Chang-Luen
Format Journal Article
LanguageEnglish
Published 2006
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ISSN:0013-4651
DOI:10.1149/1.2349286