Development, Optimization and Evaluation of a CF 4 Pretreatment Process to Remove Unwanted Interfacial Layers in Stacks of CVD and PECVD Polycrystalline Silicon-Germanium for MEMS Applications

Poly-crystalline Silicon-Germanium is a promising structural material for post-processing Micro Electro-Mechanical Systems (MEMS) above CMOS due to its excellent mechanical and electrical properties when deposited at CMOS compatible temperatures. In this work we demonstrate a technique of removing u...

Full description

Saved in:
Bibliographic Details
Published inECS transactions Vol. 28; no. 20; pp. 79 - 90
Main Authors Bryce, George, Severi, Simone, Van Hoof, Rita, Guo, Bin, Kunnen, Eddy, Witvrouw, Ann, Decoutere, Stefaan
Format Journal Article
LanguageEnglish
Published 08.10.2010
Online AccessGet full text

Cover

More Information
Summary:Poly-crystalline Silicon-Germanium is a promising structural material for post-processing Micro Electro-Mechanical Systems (MEMS) above CMOS due to its excellent mechanical and electrical properties when deposited at CMOS compatible temperatures. In this work we demonstrate a technique of removing unwanted interfacial (silicon-) germanium oxide layers that form on the surface of SiGe depositions as soon as the wafers are removed from the deposition chamber and exposed to an O2 ambient.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3489934