Circular Transmission Line Model (CTLM) Analysis for Non-Linear VI Characteristics on Mg doped GaN

In this paper, we present a model that can be used to determine semiconductor material parameters for metal-semiconductor contacts with non-linear voltage-current (V-I) characteristics. The model uses the Circular Transmission Line Model (CTLM) approach to calculate sheet resistance (RSH) and resist...

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Bibliographic Details
Published inECS transactions Vol. 11; no. 5; pp. 203 - 208
Main Authors Patel, Kinnari N., Stokes, E., Pagan, Jennifer, Burkhart, Casey C., Hodge, Michael, Batoni, Paolo
Format Journal Article
LanguageEnglish
Published 28.09.2007
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